Ultra-low-energy ion-beam-synthesis of Ge nanocrystals in thin ALD Al2O3 layers for memory applications |
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Authors: | P Dimitrakis A Mouti C Bonafos S Schamm G Ben Assayag V Ioannou-Sougleridis B Schmidt J Becker P Normand |
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Affiliation: | 1. School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China;2. Guiyang Vocational and Technical College, Guizhou, Guiyang 550081, China |
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Abstract: | Structural and electrical properties of ALD-grown 5 and 7 nm-thick Al2O3 layers before and after implantation of Ge ions (1 keV, 0.5–1 × 1016 cm?2) and thermal annealing at temperatures in the 700–1050 °C range are reported. Transmission Electron Microscopy reveals the development of a 1 nm-thick SiO2-rich layer at the Al2O3/Si substrate interface as well as the formation of Ge nanocrystals with a mean diameter of ~5 nm inside the implanted Al2O3 layers after annealing at 800 °C for 20 min. Electrical measurements performed on metal–insulator–semiconductor capacitors using Ge-implanted and annealed Al2O3 layers reveal charge storage at low-electric fields mainly due to location of the Ge nanocrystals at a tunnelling distance from the substrate and their spatial dispersion inside the Al2O3 layers. |
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