Formation of F-doped ZnO transparent conductive films by sputtering of ZnF2 |
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| Authors: | Yu-Zen Tsai Na-Fu Wang Chun-Lung Tsai |
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| Affiliation: | 1. P.G. & Research Department of Physics, AVVM Sri Pushpam College (Autonomous), Poondi, Thanjavur 613 503, Tamil Nadu, India;2. Department of Physics, RKM Vivekananda College (Autonomous), Chennai 600 004, Tamil Nadu, India;3. School of Chemical and Biotechnology, Shanmuga Arts, Science, Technology and Research Academy, Thanjavur 613 401, Tamil Nadu, India;4. P.G & Research Department of Chemistry, AVVM Sri Pushpam College (Autonomous), Poondi, Thanjavur 613 503, Tamil Nadu, India;5. Department of Electrical Engineering, Aichi Institute of Technology, Toyota City 470-0392, Japan;1. Center for Research in Engineering Surface Technology (CREST), DIT FOCAS Institute, Kevin St., Dublin, Ireland;2. School of Chemical and Pharmaceutical Sciences, Dublin Institute of Technology, Kevin St., Dublin, Ireland;3. School of Biotechnology, Dublin City University, Dublin, Ireland;4. The Surface Analysis Laboratory, Faculty of Engineering and Physical Sciences, University of Surrey, Guildford, Surrey GU2 7XH, United Kingdom;5. Environmental Engineering and Science Program, Department of Biomedical, Chemical and Environmental Engineering (DBCEE), 705 Engineering Research Center, University of Cincinnati, Cincinnati, OH 45221-0012, USA;6. Nanotechnology Research Group, Department of Environmental Science, PEM Centre, Institute of Technology Sligo, Sligo, Ireland;1. State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, PR China;2. Cyrus Tang Center for Sensor Materials and Applications, Zhejiang University, Hangzhou 310027, PR China;1. Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200, Thailand;2. School of Science, Mae Fah Luang University, Chiang Rai 57100, Thailand;3. Materials Science Research Center, Faculty of Science, Chiang Mai University, Chiang Mai 50200, Thailand |
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| Abstract: | Fluorine-doped ZnO transparent conductive thin films were successfully deposited on glass substrate by radio frequency magnetron sputtering of ZnF2. The effects of rapid thermal annealing in vacuum on the optical and electrical properties of fluorine-doped ZnO thin films have been investigated. X-ray diffraction spectra indicate that no fluorine compounds, such as ZnF2, except ZnO were observed. The specimen annealed at 500 °C has the lowest resistivity of 6.65 × 10? 4 Ω cm, the highest carrier concentration of 1.95 × 1021 cm? 3, and the highest energy band gap of 3.46 eV. The average transmittance in the visible region of the F-doped ZnO thin films as-deposited and annealed is over 90%. |
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