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Synthesis and characterization of 10% Sb doped CdTe thin films by stacked elemental layer (SEL) method |
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| Authors: | S Shanmugan S Balaji D Mutharasu |
| Affiliation: | 1. Materials Laboratory, Thiagarajar Advanced Research Centre, Thiagarajar College of Engineering, Madurai – 625 015, Tamil Nadu, India;2. School of Physics, Universiti Sains Malaysia (USM), 11800, Minden, Pulau Penang, Malaysia;1. Key Laboratory of Theoretical Chemistry of Environment, Ministry of Education, School of Chemistry and Environment, South China Normal University, Guangzhou 510006, PR China;2. Guangzhou Key Laboratory of Materials for Energy Conversion and Storage, Guangzhou 510006, PR China;3. Institute for Advanced Materials, Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, PR China;1. National University of Water and Environmental Engineering, 11, Soborna St., 33028 Rivne, Ukraine;2. National University, 2, Kotsiubynskogo St., 58012 Chernivtsi, Ukraine |
| Abstract: | Antimony doped CdTe thin films have been prepared by stacked elemental layer (SEL) method. The X-ray diffraction spectra have demonstrated that the structure of the annealed films are polycrystalline in nature and mixed CdTe and Sb2Te3 phases have been observed at high annealing temperature (500 °C). The increased texture coefficient has been observed for planes (311) and (220) rather than (111) plane of CdTe in annealed stack (Te/Cd/Sb). Transmission spectra have been recorded and the calculated band gap lies between 1.45 and 1.68 eV. A pronounced PL spectrum has been noticed at 532 nm and depicted the presence of nano size particles in annealed thin films. |
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