Effect of high-temperature annealing on lanthanum aluminate thin films grown by ALD on Si(1 0 0) |
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| Authors: | G. Congedo S. Spiga L. Lamagna A. Lamperti Yu. Lebedinskii Yu. Matveyev A. Zenkevich P. Chernykh M. Fanciulli |
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| Affiliation: | 1. I3N, Department of Physics, University of Aveiro, Campus de Santiago, 3810-193 Aveiro, Portugal;2. CICECO, Department of Materials and Ceramic Engineering, University of Aveiro, Campus de Santiago, 3810-193 Aveiro, Portugal;3. Department of Chemistry, University of North Florida, 1 UNF Drive, Jacksonville, FL 32224, USA |
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| Abstract: | Amorphous lanthanum aluminate thin films were deposited by atomic layer deposition on Si(1 0 0) using La(iPrCp)3, Al(CH3)3 and O3 species. The effects of post-deposition rapid thermal annealing on the physical and electrical properties of the films were investigated. High-temperature annealing at 900 °C in N2 atmosphere leads to the formation of amorphous La-aluminosilicate due to Si diffusion from the substrate. The annealed oxide exhibits a uniform composition through the film thickness, a large band gap of 7.0 ± 0.1 eV, and relatively high dielectric constant (κ) of 18 ± 1. |
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