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Optical and electrical properties of indium tin oxide thin films sputter-deposited in working gas containing hydrogen without heat treatments |
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| Authors: | Suning Luo Koichi Okada Shigemi Kohiki Fuki Tsutsui Hirokazu Shimooka Fumiya Shoji |
| Affiliation: | 1. Department of Materials Science, Kyushu Institute of Technology, Kitakyushu 804-8550, Japan;2. Liaoning Institute of Technology, China;3. Kyushu Kyoritsu University, Kitakyushu 807-8585, Japan;1. Department of Materials Science and Engineering, National Chung Hsing University, Taichung 402, Taiwan;2. Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 300, Taiwan;3. Department of Chemical and Materials Engineering, Chinese Culture University, Taipei 111, Taiwan;1. International Training Institute for Materials Science (ITIMS), Hanoi University of Science and Technology (HUST), No.1 Dai Co Viet, Hanoi, Vietnam;2. School of Engineering Physics (SEP), Hanoi University of Science and Technology (HUST), No.1 Dai Co Viet, Hanoi, Vietnam |
| Abstract: | Polycrystalline thin films of indium tin oxide sputter-deposited in the working gas containing hydrogen of 0.3–1.5% exhibited transmittance of ≥ 80% for visible lights and blue-shift of ≥ 0.1 eV in the optical absorption energy. The film deposited in the gas containing hydrogen of 1% demonstrated almost flat temperature-dependent resistivity and the lowest resistivity of ≈ 1.5 × 10? 4 Ω cm at room temperature. The carrier density showed an inverse V-shaped behavior with the maximum at the hydrogen concentration of 1%. The mobility stayed at almost constant below the hydrogen concentration of 1% and dropped rather rapidly above 1%. |
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