首页 | 本学科首页   官方微博 | 高级检索  
     


Ultra-dense hydrogen silsesquioxane (HSQ) structures on thin silicon nitride membranes
Authors:Sookyung Choi  Minjun Yan  Liang Wang  Ilesanmi Adesida
Affiliation:1. Micro and Nanotechnology Laboratory, University of Illinois at Urbana-Champaign, Illinois 61801, USA;2. Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, 208 N Wright Street, Illinois 61801, USA;3. Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Illinois 61801, USA;1. Tele and Radio Research Institute, Warsaw, Poland;2. Institute of Physics, PAS, Warsaw, Poland;1. Department of Physics, Faculty of Science, Cankiri Karatekin University, 18100 Cankiri, Turkey;2. Department of Physics, Faculty of Science, Gazi University, 06500 Ankara, Turkey;1. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;2. School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China;3. Royal School of Mines, Imperial College London, South Kensington Campus, London SW7 2AZ, UK
Abstract:Ultra-dense nanometer-scale gratings (20 nm pitch) on thin silicon nitride (Si3N4) membrane substrates using hydrogen silsesquioxane (HSQ) resist have been fabricated. Scanning transmission electron microscopy (STEM) and electron energy loss spectroscopy (EELS) were performed to evaluate the pattern quality of the HSQ gratings. The results are compared with HSQ gratings fabricated on silicon substrates.
Keywords:
本文献已被 ScienceDirect 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号