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Comparison of Monte Carlo and NEGF Simulations of Double Gate MOSFETs |
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| Authors: | R. Ravishankar G. Kathawala U. Ravaioli S. Hasan M. Lundstrom |
| Affiliation: | (1) Beckman Institute and Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, IL 61801, USA;(2) Department of Electrical Engineering, 1285 Electrical Engineering Building, West Lafayette, IN 47907, USA |
| Abstract: | |
| Keywords: | Monte Carlo double-gate MOSFET quantum effects velocity overshoot |
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