An Analytical Method to Extract the Physical Parameters of a Solar Cell From Four Points on the Illuminated $J{-}V$ Curve

For a variety of solar cells, it is shown that the single exponential $J{-}V$ model parameters, namely—ideality factor $eta$ , parasitic series resistance $R_{s}$, parasitic shunt resistance $R_{rm sh}$, dark current $J_{0}$, and photogenerated current $J_{rm ph}$ can be extracted simultaneously from just four simple measurements of the bias points corresponding to $V_{rm oc}$, $sim!hbox{0.6}V_{rm oc}$, $J_{rm sc}$, and $sim! hbox{0.6}J_{rm sc}$ on the illuminated $J{-}V$ curve, using closed-form expressions. The extraction method avoids the measurements of the peak power point and any $dJ/dV$ (i.e., slope). The method is based on the power law $J{-}V$ model proposed recently by us.