| 基于gm/ID参数的运算放大器设计 |
| |
| 引用本文： | 陈德斌,常昌远.基于gm/ID参数的运算放大器设计[J].数字社区&智能家居,2007,3(16):1020-1022. |
| |
| 作者姓名： | 陈德斌 常昌远 |
| |
| 作者单位： | 东南大学,集成电路学院,江苏,南京,210096 东南大学,集成电路学院,江苏,南京,210096 |
| |
| 摘 要： | 介绍一种基于gm/ID参数特性的模拟电路优化设计方法,并以CMOS密勒补偿运算放大器的设计为例具体阐述该方法的基本设计步骤.该方法以统一的gm/ID与ID/(W/L)的关系曲线为基本设计出发点,综合电路的其它设计要求,而提出的一种优化性能指标的设计思路.对所设计的运算放大器模拟仿真验证了这种方法的有效性.
|
| 关 键 词： | 运算放大器 CMOS gm/ID |
| 文章编号： | 1009-3044(2007)16-31020-03 |
| 修稿时间： | 2007年7月21日 |
Design of Amplifiers Based on gm/ID Parameter |
| |
| CHEN De-bing,CHANG Chang-yuan.Design of Amplifiers Based on gm/ID Parameter[J].Digital Community & Smart Home,2007,3(16):1020-1022. |
| |
| Authors: | CHEN De-bing CHANG Chang-yuan |
| |
| Abstract: | The aim of this paper is to present a transistor optimization methodology for analog integrated CMOS circuits,based on the physics-based gm/ID characteristics,This method dependents curve of gm/ID and ID/(W/L)in all operations regions are integrated with other design specifications,providing solutions close to the optimum.As an example,we show the results obtained for the design of a CMOS Miller operational Transconductance Amplifier,Experimental results are presented,in order to validate the methodology. |
| |
| Keywords: | Operationa Amplifier CMOS gm/ID |
| 本文献已被 CNKI 维普 等数据库收录！ |
|
