| Si(100)衬底上高质量3C-SiC的改良外延生长 |
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| 引用本文： | 孙国胜,王雷,罗木昌,赵万顺,孙殿照,曾一平,李晋闽,林兰英. Si(100)衬底上高质量3C-SiC的改良外延生长[J]. 半导体学报, 2002, 23(8): 800-804. DOI: 10.3969/j.issn.1674-4926.2002.08.003 |
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| 作者姓名： | 孙国胜 王雷 罗木昌 赵万顺 孙殿照 曾一平 李晋闽 林兰英 |
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| 作者单位： | 中国科学院半导体研究所,北京,100083 |
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| 基金项目： | 国家重点基础研究发展计划(973计划)，国家高技术研究发展计划(863计划) |
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| 摘 要： | 介绍了新近研制出的一种电阻加热式CVD/LPCVD SiC专用制备系统,并利用该系统以SiH4、C2H4和H2作为反应气体在直径为50mm的Si(100)衬底上获得了高质量的3C-SiC外延材料.用X射线衍射和Raman散射技术研究了3C-SiC外延膜的结晶质量,在80～300K的温度范围内利用Van der Pauw方法对1～3μm厚的外延膜的电学特性进行了测试,室温Hall迁移率最高达到470cm2/(V*s),载流子浓度为7.7×1017cm-3.
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| 关 键 词： | CVD/LPCVD 异质外延生长 3C-SiC |
Improved Epitaxy of 3C-SiC Layers on Si(100) by New CVD/LPCVD System |
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| Sun Guosheng,Wang Lei,Luo Muchang,Zhao Wanshun,Sun Dianzhao,Zeng Yiping,Li Jinmin and Lin Lanying. Improved Epitaxy of 3C-SiC Layers on Si(100) by New CVD/LPCVD System[J]. Chinese Journal of Semiconductors, 2002, 23(8): 800-804. DOI: 10.3969/j.issn.1674-4926.2002.08.003 |
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| Authors: | Sun Guosheng Wang Lei Luo Muchang Zhao Wanshun Sun Dianzhao Zeng Yiping Li Jinmin Lin Lanying |
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| Abstract: | Single crystalline 3C-SiC epitaxial layers are grown on φ50mm Si wafers by a new resistively heated CVD/LPCVD system,using SiH4,C2H4 and H2 as gas precursors.X-ray diffraction and Raman scattering measurements are used to investigate the crystallinity of the grown films.Electrical properties of the epitaxial 3C-SiC layers with thickness of 1～3μm are measured by Van der Pauw method.The improved Hall mobility reaches the highest value of 470cm2/(V*s) at the carrier concentration of 7.7×1017cm-3. |
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| Keywords: | CVD/LPCVD heteroepitaxy 3C-SiC |
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