Research on cryogenic behaviors of low noise amplifier with build-in PIN diode limiter |
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| Authors: | Heyi Ren Xiaoping Zhang Yidong Chen Yiran Wang Zhan Xu Bin Wei Guoyong Zhang Bisong Cao Xubo Guo |
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| Affiliation: | 1. Aalto University, Dept. of Applied Mechanics, Research Group on Maritime Risk and Safety, 02150 Espoo, Finland;2. Memorial University, Faculty of Engineering and Applied Science, Ocean and Naval Architectural Engineering, St John''s, NL A1B 1K1, Canada;1. Dipartimento di Ingegneria, University of Messina, 98166 Messina, Italy;2. Dipartimento di Scienze matematiche e informatiche, Scienze fisiche e Scienze della terra, University of Messina, 98166 Messina, Italy |
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| Abstract: | In this article we elucidate the design and fabrication of a P-band cryogenic low noise amplifier (CLNA) with built-in limiter circuit, and further studied the characteristics of PIN diode limiter at different temperature. Measurements at 75 K shows the P-band CLNA with build-in limiter has a good performance with noise figure lower than 0.5 dB, the input and output voltage standing wave ratio (VSWR) less than 1.5 and input 1 dB power compression point ?4 dBm within the band width 300 MHz. The variation of the gain within ±0.1 dB under the impact of 20 dBm input power level signals. In addition, the maximum allowed input power of the CLNA has increased from 13 dBm to 22 dBm. |
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