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高温超导场效应晶体管的动态导纳模拟
引用本文:蔡琪玉,蒋建飞,沈波. 高温超导场效应晶体管的动态导纳模拟[J]. 电子学报, 1999, 27(5): 139-141
作者姓名:蔡琪玉  蒋建飞  沈波
作者单位:上海交通大学微电子研究所,上海,200030
基金项目:国家自然科学基金,上海市科学技术发展基金
摘    要:本文基于我们建立的超声场效应器件的统一信号理论,引进了动态导纳参数。对高温超导场效应晶体管的低频电流-电压特性进行了数值模拟。分别对推广的二流体模拟中正常电流和超导电流在一定的条件下随栅电压、漏电压、温度和频率的变化进行了分析。给出了一种高温超导场效应器件低频特性新的研究方法。

关 键 词:动态导纳模拟  推广的二流体模型

The Simulation of Kinetic Admittance for High Tc Superconducting Field Effect Transistor
Cai Qiyu,Jiang Jianfei,Shen Bo. The Simulation of Kinetic Admittance for High Tc Superconducting Field Effect Transistor[J]. Acta Electronica Sinica, 1999, 27(5): 139-141
Authors:Cai Qiyu  Jiang Jianfei  Shen Bo
Affiliation:Cai Qiyu,Jiang Jianfei,Shen Bo;(
Abstract:A kinetic admittance parameter was introduced on the basis of our general small signal model of superconducting field effect devices.A numerical simulation of low frequency current voltage characteristic for the high Tc superconducting field effect transistor is conducted.Dependence of the normal current and supercurrent in the generalized two fluid model on gate voltage,drain voltage,temperature and frequency was analyzed.A new investigation method of low frequency characteristic of high Tc superconducting field effect devices was founded.
Keywords:Kinetic admittance simulation  Generalized two fluid model
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