Semiconducting properties of anodic WO3 amorphous films

The semiconducting properties of amorphous WO₃ anodic films grown in different solutions and at different current densities have been investigated. The Mott—Schottky plots have shown that the donor density, N_d, of the grown films is strongly dependent on the films thickness and is not influenced by the nature of the anodizing solutions. The possible influence of the kinetics of anodization on N_d is discussed. The intersection voltages at 1/C²_sc = 0 in the Mott—Schottky plots show a complex dependence on the film thickness. The possibility of obtaining the flat band potential from these plots is also discussed.A linear relationship between the square of the photocurrent and the electrode potential has been observed as previously reported for single crystals. The dissolution rate of anodic WO₃ films is increased under illumination and strongly decreased in presence of Fe^{$\text{2+}\text{3+}$} couple. The kinetics of electron transfer between the amorphous WO₃ anodic films and the Fe^{$\text{2+}\text{3+}$} redox couple in the electrolyte seems to occur in accordance with the theory developed for single crystal semiconductors.