GaN Quantum-Dot Formation by a Temperature Increase in an Ammonia Flow |
| |
Authors: | Maidebura Y. E. Malin T. V. Zhuravlev K. S. |
| |
Affiliation: | 1.Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, 630090, Novosibirsk, Russia ; |
| |
Abstract: | Semiconductors - The transformation of a two-dimensional GaN layer into three-dimensional islands (2D–3D transition) under increasing temperature in a flow of ammonia is investigated... |
| |
Keywords: | |
本文献已被 SpringerLink 等数据库收录! |
|