| 集成门极换流晶闸管门极驱动电路 |
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| 引用本文： | 张婵,童亦斌,金新民. 集成门极换流晶闸管门极驱动电路[J]. 电力电子技术, 2007, 41(9): 104-105 |
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| 作者姓名： | 张婵 童亦斌 金新民 |
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| 作者单位： | 北京交通大学,北京,100044;北京交通大学,北京,100044;北京交通大学,北京,100044 |
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| 摘 要： | 介绍了集成门极换流晶闸管(IGCT)的基本结构,它同时拥有晶体管的关断特性和晶闸管的开通特性,是一种理想的兆瓦级中高压半导体开关器件.IGCT必须结合集成门极驱动电路才能完成硬开通和硬关断,因此门极驱动电路的性能将直接影响器件性能的优劣.具体设计了630A/4500V逆导GCT的驱动电路,并分析了驱动电路的要求和设计原理.
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| 关 键 词： | 功率半导体器件 驱动电路/集成门极换流晶闸管 硬关断 |
| 文章编号： | 1000-100X（2007）09-0104-02 |
| 修稿时间： | 2007-01-04 |
Investigation on Gate Drive Circuit of IGCT |
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| ZHANG Chan,TONG Yi-bin,JIN Xin-min. Investigation on Gate Drive Circuit of IGCT[J]. Power Electronics, 2007, 41(9): 104-105 |
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| Authors: | ZHANG Chan TONG Yi-bin JIN Xin-min |
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| Affiliation: | Beijing Jiaotong University, Beijing 100044, China |
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| Abstract: | This paper introduces the basic structure of Gate Commutation Thyristor(GCT),which combines the advantages of IGBT and GTO.It has both the characteristics of turning off as transistor and turning on as thyrsitor.The Integrated Gate Commutation Thyristor(IGCT) is a new kind of high power semiconductor,and must have the integrated gate drive circuit to finish hard turning on and turning off's processes.The gate drive circuit influences GCT's characteristic directly.The gate drive circuit of 630A/4500V reverse conducting IGCT has been designed and the basic principle of gate drive circuit and designing method are analyzed. |
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| Keywords: | power semiconductors drive circuit / integrated gate commutation thyristor hard turu-off |
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