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39.5-GHz static frequency divider implemented in AlInAs/GaInAs HBTtechnology
Authors:Hafizi   M. Jensen   J.F. Metzger   R.A. Stanchina   W.E. Rensch   D.B. Allen   Y.K.
Affiliation:Hughes Res. Lab., Malibu, CA;
Abstract:A static divide-by-4 frequency divider operating at 39.5 GHz with a corresponding gate delay of 12.6 ps was implemented using InP-based HBT technology. The AlInAs/GaInAs HBT devices utilized in the divider incorporated a graded emitter-base (E-B) junction and had a unity gain cutoff frequency, maximum frequency of oscillation, and current gain β of 130 GHz, 91 GHz, and 39, respectively. The divider was operated with a 3-V power supply and consumed a total power of 425 mW (77 mW per flip-flop). The divider functional yield was over 90%. The operating frequency of this circuit is the highest ever reported for a static divider
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