Low-frequency noise characteristics of AlInAs/GaInAs modulation-doped field-effect transistors |
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| Authors: | Sasaki G. Hong W.-P. Chang G.-K. Bhat R. Turco F.S. Leblanc H.P. |
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| Affiliation: | Bell Commun. Res., Red Bank, NJ, USA; |
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| Abstract: | The output noise voltage of AlInAs/GaInAs MODFETs grown by both MOCVD and MBE was measured at frequencies from 1 MHz to 1.5 GHz under different bias conditions for the first time. For frequencies below 500 MHz the noise voltage showed a 1/f dependence with a corner frequency around 200 MHz. The low-frequency noise was larger at the bias conditions giving higher transconductance.<> |
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