Substitution site effect on structural and dielectric properties of La–Bi modified PZT |
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Authors: | Puja Goel K L Yadav |
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Affiliation: | (1) Smart Materials Research Laboratory, Department of Physics, Indian Institute of Technology, Roorkee, Uttaranchal, 247667, India |
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Abstract: | Substitution site effect of (La:Bi) on the structural and dielectric properties of chemically prepared PZT system Pb0.92 (La1−x
Bi
x
) 0.08(Zr0.65Ti0.35)0.98O3 (a) x = 0.0, (b) x = 0.1, (c) x = 0.2, (d) x = 0.3, (e) x = 0.4 and (f) x = 1.0] have been studied. The samples were prepared by employing a simple co-precipitation technique using nitrates of lead,
lanthanum, bismuth, zirconium and titanium isopropoxide. X-ray diffraction studies confirm the formation of phase pure and
homogeneous ceramics of rhombohedral symmetry without bismuth addition and a tetragonal symmetry was confirmed for the compounds
containing bismuth due to the presence of a doublet (200) peak in these compounds. Scanning electron micrographs shows a uniform
grain distribution and the grain size and shape were modified upon bismuth addition. Increase in Bi content causes a decrease
in average grain size of the material. Dielectric measurements demonstrate a diffuse type of phase transition and this diffuseness
decreases with increasing Bi ion concentration. Composition (A) only showed relaxor type of behaviour. Variation of dielectric
constant with temperature shows that both T
c and εmax increases with increase of Bi concentration. This was explained on the basis of favorable B-site substitution of Bi+3 ions and therefore the increased strength of spontaneous polarization. Finally, it is evident that the type of substitution
site also has a significant effect on the dielectric properties of the PZT system. All these results suggest that the synthesized
ceramics may be suitable for device applications. |
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