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Dislocation-related luminescence in single-crystal silicon subjected to silicon ion implantation and subsequent annealing |
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| Authors: | N. A. Sobolev A. M. Emel’yanov V. I. Sakharov I. T. Serenkov E. I. Shek D. I. Tetel’baum |
| Affiliation: | (1) Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia;(2) Research Physicotechnical Institute, Lobachevskiĭ State University, Nizhni Novgorod, 603950, Russia |
| Abstract: | Implantation of silicon ions with an energy of 100 keV at a dose of 1 × 1017 cm?2 into n-type floatzone Si does not lead to the formation of an amorphous layer. Subsequent annealing in a chlorine-containing atmosphere at 1100°C gives rise to dislocation-related luminescence. The intensity of the dominant D1 line peaked at a wavelength of ～1.54 μm grows as the annealing time is increased from 15 to 60 min. |
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