| 不同栅氧厚度NMOS管的热载流子效应 |
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| 引用本文： | 张骏. 不同栅氧厚度NMOS管的热载流子效应[J]. 电子与封装, 2006, 6(6): 37-39 |
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| 作者姓名： | 张骏 |
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| 作者单位： | 东南大学电子工程系,江苏,南京,210096 |
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| 摘 要： | 文章主要讨论在相同工艺条件下,针对不同栅氧厚度(例如:Tox分别为150A、200A、 250A)的NMOSFET进行加速应力试验,在试验中当某些参数的漂移量达到失效判据规定的值时(例如:阈值电压改变50mV),可以得到器件的应力寿命,由此估计该器件在正常工作条件下的寿命值, 并对该工艺的热载流子注入效应进行评价。
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| 关 键 词： | 热载流子效应 栅氧厚度 寿命 |
| 文章编号： | 1681-1070（2006）06-37-03 |
| 收稿时间： | 2006-03-21 |
| 修稿时间： | 2006-03-21 |
Hot Carrier Effect of NMOSFET with Different Gate Oxide Thickness |
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| Zhang Jun. Hot Carrier Effect of NMOSFET with Different Gate Oxide Thickness[J]. Electronics & Packaging, 2006, 6(6): 37-39 |
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| Authors: | Zhang Jun |
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| Affiliation: | Electronic Engineering Department of Southeast University, Nanjing Jiangsu 210096, China |
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| Abstract: | For different NMOSFET with different gate oxide thickness, we did accelerate stressing experiment. We can get the stress time which a particular parameter has changed from its unstressed value ( eg: the threshold voltage changed by 50mV ), and estimate the lifetime of these devices at normal working conditions and evaluate this process' hot carrier effect exactly. |
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| Keywords: | Hot Carrier Effect Thickness of Gate Oxide Lifetime |
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