| 钽掺杂的钌基厚膜电阻导电相和玻璃相颗粒尺寸效应的研究 |
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| 引用本文： | 巨新,杨建红.钽掺杂的钌基厚膜电阻导电相和玻璃相颗粒尺寸效应的研究[J].电子与信息学报,1995,17(2):215-219. |
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| 作者姓名： | 巨新 杨建红 |
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| 作者单位： | 中国科技大学近代物理系，华东微电子研究所 合肥 230026 中国科学院高能物理研究所 北京 100039，合肥 230031 |
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| 摘 要： | 本文报道了钽掺杂钌基厚膜电阻制备过程中导电相和玻璃相颗粒尺寸效应的实验研究结果。当导电相和玻璃相颗粒尺寸分别达到25和50nm时,电阻阻值和电阻温度系数也随之发生显著变化,并尝试根据厚膜电阻导电机理对其产生的原因进行定性的分析。
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| 关 键 词： | 钌基厚膜电阻 颗粒尺寸效应 厚膜电阻导电机理 电阻温度系数 |
| 收稿时间： | 1993-10-15 |
| 修稿时间： | 1994-8-24 |
STUDY ON THE PARTICLE SIZE EFFECT OF Ta DOPED Ru-BASE THICK FILM RESISTOR |
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| Ju Xin,Yang Jianhong.STUDY ON THE PARTICLE SIZE EFFECT OF Ta DOPED Ru-BASE THICK FILM RESISTOR[J].Journal of Electronics & Information Technology,1995,17(2):215-219. |
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| Authors: | Ju Xin Yang Jianhong |
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| Affiliation: | University of Science and Technology of China, Hefei 230026; Institute of High Energy Physics, Academia Sinica, Beijing 100039;Institute of Microelectronics of Eastern China, Hefei 230031 |
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| Abstract: | This paper reports the particle size effect on the resistance and TCR of Ta-doped Ru-base thick film resistor, which occurs when the particle sizes of two phases reach critical values (conductive phase 25nm, glass phase 50nm). And it can be explained qualitatively with the conduction mechanism of thick film resistor. |
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| Keywords: | Ru-base thick film resistor Particle size effect Conductive mechanism of thick film resistor Temperature coefficient of resistance |
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