| GaN材料系列的研究进展 |
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| 引用本文： | 宋登元,王秀山.GaN材料系列的研究进展[J].微电子学,1998,28(2):124-128. |
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| 作者姓名： | 宋登元 王秀山 |
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| 作者单位： | 河北大学电子与信息工程系(宋登元)，北京广播电视大学(王秀山) |
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| 摘 要： | ＧａＮ及其合金作为第三代半导体材料具有一系列优异的物理和化学性质，在光电子器件，高温大功率电子器件及高频微波器件应用方面具有广阔的前景，已成为当前高科技领域的研究重点，论述了这种材料的研究历史与发展现状，物理与化学性质，薄膜的生长方法及在光学电子和微电子器件应用于方面的研究进展。
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| 关 键 词： | 半导体 氮化镓 材料 |
Advances of the Development of GaN Semiconductor and Its Alloys |
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| SONG Deng Yuan Dept.Electric & Information Engineering,Baoding,Hebei WANG Xiu Shan Beijing Radio and Television University,Beijing.Advances of the Development of GaN Semiconductor and Its Alloys[J].Microelectronics,1998,28(2):124-128. |
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| Authors: | SONG Deng Yuan DeptElectric & Information Engineering Baoding Hebei WANG Xiu Shan Beijing Radio and Television University Beijing |
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| Affiliation: | SONG Deng Yuan Dept.Electric & Information Engineering,Baoding,Hebei 071002 WANG Xiu Shan Beijing Radio and Television University,Beijing 010035 |
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| Abstract: | As the third generation of semiconductors,GaN and its alloys have excellent physical and chemical properties.It can be used in a variety of fields including optoelectronics,high temperature high power electronic devices and high frequency microwave devices.Physical and chemical properties of the new semiconductor materials and techniques for their film growth are dealt with.Progresses in the development of GaN semiconductors are reviewed. |
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| Keywords: | Semiconductor GaN Photoelectronics Microelectronics Microwave device |
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