Investigation of optical and electrical properties of ZnO thin films |
| |
Authors: | Li-Wen Lai Ching-Ting Lee |
| |
Affiliation: | aInstitute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan, ROC |
| |
Abstract: | Zinc oxide (ZnO) thin films were deposited on Si substrates using various working pressures by magnetron sputter. The resistivity of the deposited ZnO films decreases with working pressure, and the resistivity of 4.3 × 10−3 Ω cm can be obtained without post annealing. According to the optical transmittance measurements, the optical transmittance above 90% in the wavelength longer than 430 nm and about 80% in the wavelength of 380 nm can be found. Using time-resolved photoluminescence measurement, the carrier lifetime increases with working pressure due to the reduction of nonradiative recombination rate. The reduction of nonradiative recombination rate is originated from the decrease of oxygen vacancies in the ZnO films deposited at a higher working pressure. This result is verified by the photoluminescence measurements. Besides, by increasing the working pressure, the absorption coefficient was decreased and the associated optical energy gap of ZnO thin films was increased. |
| |
Keywords: | Optical transmittance Photoluminescence Working pressure Zinc oxide |
本文献已被 ScienceDirect 等数据库收录! |
|