A one-dimensional analytical model for the dual-gate-controlledthin-film SOI MOSFET |
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Authors: | Schubert M. Hofflinger B. Zingg R.P. |
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Affiliation: | Inst. for Microelectron. Stuttgart; |
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Abstract: | A one-dimensional analytical model for dual-gate-controlled SOI MOSFETs is presented and applied to a stacked p-channel MOSFET fabricated by epitaxial lateral overgrowth (ELO). The authors found and modeled a nonlinear dependence of front-gate threshold voltage on back-gate voltage if threshold is defined by a constant current instead of a constant silicon-surface potential. It is demonstrated by comparison of subthreshold slopes that surface potentials are not pinned to the onset of strong inversion or accumulation. Accurate one-dimensional modeling is a necessity for device characterization and a precondition for general SOI models for circuit simulation |
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