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基于PVI与运放的IGBT串联均压电路研究
引用本文:王永清,李雷,李小佳,王海舟.基于PVI与运放的IGBT串联均压电路研究[J].电力电子技术,2009,43(1).
作者姓名:王永清  李雷  李小佳  王海舟
作者单位:1. 钢铁研究总院,国家钢铁材料测试中心,北京,100081;河北大学,河北,保定,071002
2. 河北大学,河北,保定,071002
3. 钢铁研究总院,国家钢铁材料测试中心,北京,100081
基金项目:国家科技部科学仪器设备升级改造专项课题 
摘    要:介绍了一种采用PVI和运算放大器控制高压绝缘栅双极晶体管(IGBT)串联均压的方法.简述了基于光压隔离器(PVI)的串联IGBT隔离驱动电路和基于PMOSFET的均压串联反馈电路,详述了采用运算放大器反馈控制实现高压IGBT串联均压的方法.最后,将PMOSFET均压和运算放大器反馈控制均压电路分别运用到高压恒流源中,通过对实验数据的分析比较,运用运算放大器反馈控制均压误差小于0.6%,优于PMOSFET均压效果.

关 键 词:驱动电路  串联  运算放大器/均压  光压隔离器  绝缘栅双极晶体管

Research of the Voltage Balance of Series IGBT based on Photo Voltaic Isolator and the Operation Amplifier
WANG Yong-qing,LI Lei,LI Xiao-jia,WANG Hai-zhou.Research of the Voltage Balance of Series IGBT based on Photo Voltaic Isolator and the Operation Amplifier[J].Power Electronics,2009,43(1).
Authors:WANG Yong-qing  LI Lei  LI Xiao-jia  WANG Hai-zhou
Affiliation:1.Hebei University;Baoding 071002;China;2.Central Iron & Steel Research Institute;National Testing Center of Iron & Steel;Beijing 100081;China
Abstract:The voltage balance research on series high voltage isolated gate bipolar transistor(HVIGBT) is improved with photo voltaic isolator(PVI) and the operation amplifier.The circuit of the series IGBT isolated drive based on PVI is sim-ply introduced,the HVIGBT isolated drive and voltage balance based on the PMOSFET are given and the series HVIGBT isolated drive and voltage balance with the operation amplifier is described.The IGBT voltage balance circuit with PMOS-FET and with the operation amplifier are used ...
Keywords:drive circuit  series  operation amplifier/voltage balance  photo voltaic isolator  isolated gate bipolar transistor  
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