Mg质量分数及缓冲层对ZnMgO∶Ga薄膜性能的影响

为了解决氧化锌在柔性电子器件应用方面的问题,利用脉冲激光沉积法(PLD)在聚对苯二甲酸乙二醇酯（PET）柔性衬底上室温下制备镓掺杂氧化锌（ZnO∶Ga）和镓掺杂Zn1-xMgxO (Zn1-xMgxO∶Ga)透明导电薄膜,采用X射线衍射仪（XRD）,扫描电镜,霍尔效应测试仪,紫外-可见光分光光度计对结构和性能进行表征,探讨靶材中镁质量分数对薄膜结构及光电性能的影响,并采用预沉积ZnO无机缓冲层法来改善薄膜样品的性能.研究结果表明,在柔性衬底上通过优化生长参数制备出性能良好的ZnO基透明导电薄膜,通过缓冲层的预沉积可以明显改善薄膜的结构和电学性能,薄膜电阻率最低可至8.27×10^-4 Ω·cm,在可见光区平均透射率超过70%.

Effect of Mg content and buffer layer on properties of ZnMgO: Ga thin films

To solve the problem on ZnO applied in flexible opt electronic devices, transparent conducting ZnO: Ga and Zn1-xMgxO∶Ga films were deposited on flexible Polyethylene Terephthalate (PET) substrates by Pulsed Laser Deposition. XRD, SEM, Hall effect measurement, and UV-VIS-IR spectrophotometer were used to characterize the films, and the structural, electrical and optical properties of the films with different Mg concentration were studied. Then the method of buffer layer pre-deposition was used to improve the performance of the films. The results show that the ZnO-based transparent conducting thin films were obtained on flexible substrate by PLD method, and the structural, electrical properties of the films were obviously improved by buffer layer pre-deposition. The lowest electrical resistivity of the films we prepared is 8.27×10-4Ω·cm and the transmittance is more than 70% in the visible region．