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等离子体增强化学气相淀积a-SiCOF薄膜的稳定性研究
引用本文:丁士进,张庆全,王鹏飞,张卫,王季陶. 等离子体增强化学气相淀积a-SiCOF薄膜的稳定性研究[J]. 高技术通讯, 2001, 11(11): 52-55
作者姓名:丁士进  张庆全  王鹏飞  张卫  王季陶
作者单位:复旦大学电子工程系,
基金项目:国家自然科学基金 ( 6 9776 0 2 6 ),高等学校骨干教师计划资助项目
摘    要:以正硅酸乙酯(TEOS)/C4F8/Ar为气源,采用等离子体增强化学气相淀积(PECVD)方法制备了低价电常数a-SiCOF介质薄膜,并借助X射线光电子能谱(XPS)和傅立叶变换红外光谱(FTIR)对薄膜的化学键结构、热稳定性和抗吸水性进行了研究。

关 键 词:等离子体增强化学气相淀积 a-SiCOF薄膜 稳定性 XPS FTIR 红外光谱 掺碳 掺氟 氧化硅薄膜

Study on Stability of a-SiCOF Films Deposited by Plasma Enhanced Chemical Vapor Deposition
Ding Shijin,Zhang Qingquan,Wang Pengfei,Zhang Wei,Wang Jitao. Study on Stability of a-SiCOF Films Deposited by Plasma Enhanced Chemical Vapor Deposition[J]. High Technology Letters, 2001, 11(11): 52-55
Authors:Ding Shijin  Zhang Qingquan  Wang Pengfei  Zhang Wei  Wang Jitao
Abstract:Low-dielectric-constant a-SiCOF films have been prepared from TEOS, C 4F 8 and Ar by using plasma enhanced chemical vapor deposition method. With the aid of X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared spectroscopy (FTIR), the chemical bonding configuration, thermal stability and resistance to water of the films are explored.
Keywords:Plasma enhanced chemical vapor deposition   a-SiCOF films   Stability   XPS   FTIR
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