High-voltage and high-temperature applications of DTMOS with reverse Schottky barrier on substrate contacts |
| |
| Authors: | Tien-Sheng Chao Yao-Jen Lee Tiao-Yuan Huang |
| |
| Affiliation: | Dept. of Electrophys., Nat. Chiao Tung Univ., Hsinchu, Taiwan; |
| |
| Abstract: | In this letter, for the first time, application of dynamic threshold voltage MOSFET (DTMOS) with reverse Schottky barrier on substrate contacts (RSBSCs) for high voltage and high temperature is presented. By this RSBSC, DTMOS can be operated at high voltage (>0.7 V), and exhibits excellent performance at high temperature in terms of ideal subthreshold slope, low threshold voltage and high driving current. |
| |
| Keywords: | |
|
|
