Diamond/WC bilayer formation mechanism by hot-filament CVD

A method for the growth of Diamond/WC bilayers in a single process is presented with interest for the production of well adhered electrical contacts to diamond surfaces. This process uses a common hot filament chemical vapor deposition (HFCVD) reactor, with W filaments as the source for the deposition of the metallic layer, and H₂ and CH₄ gasses as the reactive species for the diamond growth. The method begins by vaporizing the filaments in vacuum for a few minutes, followed by the chemical vapor deposition of diamond. The results have shown that by varying the filament vaporization time and temperature it is possible to deposit on the Si substrate tungsten containing coatings of different thicknesses. The process starts by vaporization of naturally oxidized filaments and deposition on the substrate. Afterward, the tungsten oxide carburises to W₂C and WC phases. The CVD growth of the diamond layers on these carbide layers is dependent on the CH₄/H₂ ratios, system pressure and substrate temperature. The seeding of the Si substrates with diamond powder before the CVD process, guarantees that diamond is nucleated inside the metallic carbide layer, anchoring the top nanocrystalline diamond layer.