8mW 17/24 GHz dual-band CMOS low-noise amplifier for ISM-band application |
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Authors: | Jhon H-S Song I Jeon J Jung H Koo M Park B-G Lee JD Shin H |
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Affiliation: | (Department of Electrical and Computer Science Engineering,Seoul National University, Gwanak-gu, Seoul 151-742, Korea) E-mail: kindro1@snu.ac.ki; |
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Abstract: | As wireless applications expand, requirements for a radio that can support multi-bands and multi-standards are continuously increasing. In a single-chip radio, a low noise amplifier (LNA) plays an important role in the noise performance or sensitivity of the total receiver chain. Although up to now a number of broadband and dualband LNAs have been reported with good performance in CMOS technology, most previous work has focused on a low frequency range, below 10 GHz. In general a dual-band LNA can be achieved by combining two LNAs in parallel for each narrow band 1]. However, this approach demands twice the power dissipation, a large chip area and therefore a significant increase in cost. Recently the low power and compact-sized dual-band LNA using a switching inductor, capacitor and concurrent method also has been reported 2?4]. In this Letter a low power concurrent dual-band LNA is proposed which is suitable for 17.1?17.3 GHz and 24?24.25 GHz industrial, scientific and medical (ISM) band application. |
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