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Cu(In,Ga)Se2 solar cells with superstrate structure using lift-off process
Authors:Shintaro OsadaYasuhiro Abe  Takaya AnegawaTakashi Minemoto  Hideyuki Takakura
Affiliation:a College of Science and Engineering, Ritsumeikan University, 1-1-1 Nojihigashi, Kusatsu 525-8577, Japan
b Ritsumeikan Global Innovation Research Organization, Ritsumeikan University, 1-1-1 Nojihigashi, Kusatsu 525-8577, Japan
Abstract:Cu(In,Ga)Se2 (CIGS) solar cells with a superstrate structure were fabricated using a lift-off process. To widen the variety of substrate choices for CIGS solar cells, a lift-off process was developed without an intentional sacrificial layer between the CIGS and Mo back-contact layers. The CIGS solar cells fabricated on Mo/soda-lime glass (SLG) were transferred to an alternative SLG substrate. The conversion efficiency of the CIGS solar cells with the superstrate structure was 5.1%, which was almost half that of the CIGS solar cells with a substrate structure prior to the lift-off process. The low conversion efficiency was caused by the high series resistance and low shunt resistance, which would be due to the junction resistance between the CIGS/back contact and cracks introduced during the lift-off process, respectively.
Keywords:Cu(In,Ga)Se2   Solar cell   Lift-off   Superstrate structure
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