Cu(In,Ga)Se2 solar cells with superstrate structure using lift-off process |
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Authors: | Shintaro OsadaYasuhiro Abe Takaya AnegawaTakashi Minemoto Hideyuki Takakura |
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Affiliation: | a College of Science and Engineering, Ritsumeikan University, 1-1-1 Nojihigashi, Kusatsu 525-8577, Japan b Ritsumeikan Global Innovation Research Organization, Ritsumeikan University, 1-1-1 Nojihigashi, Kusatsu 525-8577, Japan |
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Abstract: | Cu(In,Ga)Se2 (CIGS) solar cells with a superstrate structure were fabricated using a lift-off process. To widen the variety of substrate choices for CIGS solar cells, a lift-off process was developed without an intentional sacrificial layer between the CIGS and Mo back-contact layers. The CIGS solar cells fabricated on Mo/soda-lime glass (SLG) were transferred to an alternative SLG substrate. The conversion efficiency of the CIGS solar cells with the superstrate structure was 5.1%, which was almost half that of the CIGS solar cells with a substrate structure prior to the lift-off process. The low conversion efficiency was caused by the high series resistance and low shunt resistance, which would be due to the junction resistance between the CIGS/back contact and cracks introduced during the lift-off process, respectively. |
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Keywords: | Cu(In,Ga)Se2 Solar cell Lift-off Superstrate structure |
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