硅衬底Sr_(1-x)La_xTiO_3薄膜光敏特性研究

利用氩离子束镀膜技术在 Si O2 / Si衬底上淀积钛酸镧锶 (Sr1 - x L ax Ti O3)膜 ,并制成平面型电阻器。研究了薄膜电阻器的光电流与照度、电压和电极间距的关系以及薄膜在调制光下的频率特性 ,计算出薄膜中载流子寿命约为 2 9ms。结果表明 ,Sr1 - x L ax Ti O3薄膜在可见光区域具有较好的光敏特性 ,其灵敏度和光电导增益都比较高。在弱照度下 ,光电流随照度变化较快 ,主要与单分子复合过程相关 ;而在强照度下 ,变化趋于缓慢 ,这与双分子复合过程有关

A study on photo-sensitivity characteristics of Sr1-xLaxTIOs film on silicon sobstrates

Srl-xLaxTiO3 film deposited on a SiO2/Si substrate by argon ion-beam sputtering technique is used to fabricate a planner resistor by standard integrated-circuit technology. Investigated are the relationship of the photoourrent versus illumination, voltage and distance between electrodes and photocurrcnt-frequency characteristics of the film-resistors. The calculated carrier lifetime is about 29 ms. Investigation results show that Srl-xLaxTiO3 film possesses superior photosensitivity characteristics in the range of visible light,and higher sensitivity and photoconductivity gain. Under small illumination, current variation is large, which is related with one-center recombination process; while under strong illumination, the variation is smooth, which is related with two-center recombination process. (8 refs.)