| 单粒子翻转敏感区定位的脉冲激光试验研究 |
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| 引用本文： | 余永涛,封国强,上官士鹏,陈睿,韩建伟. 单粒子翻转敏感区定位的脉冲激光试验研究[J]. 原子能科学技术, 2015, 49(1): 176-180. DOI: 10.7538/yzk.2015.49.01.0176 |
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| 作者姓名： | 余永涛 封国强 上官士鹏 陈睿 韩建伟 |
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| 作者单位： | 1.中国科学院 空间科学与应用研究中心，北京100190；2.中国科学院大学，北京100049 |
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| 基金项目： | 基础科研计划资助项目(A1320110028)；中国科学院支撑技术项目资助 |
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| 摘 要： | 利用脉冲激光单粒子翻转敏感区定位成像系统,对静态随机存储器件IDT71256开展了单粒子翻转敏感区定位的试验研究。为避开器件正面金属层对激光的阻挡,试验采用背面辐照方式进行测试。试验结果表明,存储单元中存储数据类型对器件单粒子翻转的敏感性有较大影响,由测得的单粒子翻转敏感区分布图经处理得到单粒子翻转截面,结果与重离子试验测得的翻转截面数据一致。
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| 关 键 词： | 单粒子效应 敏感区定位 数据类型 翻转截面 |
Experimental Study on Pulsed Laser Single Event Upset Sensitivity Mapping |
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| YU Yong-tao,FENG Guo-qiang,SHANGGUAN Shi-peng,CHEN Rui,HAN Jian-wei. Experimental Study on Pulsed Laser Single Event Upset Sensitivity Mapping[J]. Atomic Energy Science and Technology, 2015, 49(1): 176-180. DOI: 10.7538/yzk.2015.49.01.0176 |
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| Authors: | YU Yong-tao FENG Guo-qiang SHANGGUAN Shi-peng CHEN Rui HAN Jian-wei |
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| Affiliation: | 1.Center for Space Science and Applied Research, Chinese Academy of Sciences, Beijing 100190, China;2.University of Chinese Academy of Sciences, Beijing 100049, China |
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| Abstract: | The pulsed laser facility for single event upset (SEU) sensitivity mapping was utilized to study SEU sensitivity mapping of SRAM IDT71256. To avoid the block of the metal layer in the front side of integrated circuit, the backside testing method was used. The experiment results show that the SEU sensitivity of the SRAM cell depends on the pattern of data stored in the memory cell. The SEU sensitivity mapping could be used to construct the corresponding SEU cross section, which is validated by the heavy ion beam test result. |
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| Keywords: | single event effect sensitivity mapping data pattern upset cross section |
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