A well-synchronized sensing/equalizing method for sub-1.0-Voperating advanced DRAMs |
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Authors: | Ooishi T Asakura M Tomishima S Hidaka H Arimoto K Fujishima K |
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Affiliation: | ULSI Lab., Mitsubishi Electr. Corp., Hyogo; |
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Abstract: | Proposes an advanced DRAM array driving technique which can achieve low-voltage operation, a well-synchronized sensing and equalizing method. This method sets the DRAM array free from the body effect, achieves a small influence of the short channel effect, and reduces the leakage current. The sense and restore amplifier and equalizer can operate rapidly under a low-voltage operating condition such as 1.0 V VCC. Therefore, one can make determining the V th easy for the satisfaction of the high-speed, the low-power dissipation, and a simple device structure. The well-synchronized sensing and equalizing method is applicable to low-voltage operating DRAMs with capacity of 256 Mbits and more |
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