| 双管S型负阻器件的研究 |
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| 引用本文： | 魏希文 李凤银. 双管S型负阻器件的研究[J]. 电子学报, 1995, 23(2): 74-77 |
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| 作者姓名： | 魏希文 李凤银 |
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| 作者单位： | 大连理工大学半导体研究室，辽宁朝阳无线电元件厂 |
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| 摘 要： | 模拟电路实验证明用两个同极性的晶体管以多种电路接法都能获得具有Ｓ型负阻特性的两端器件。在此实验基础上研制得到一种双向两端Ｓ型负阻器件（ＴＢＮＲＤ器件）。本文还对该器件产生负阻的原因进行了理论分析。
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| 关 键 词： | 负阻器件 两端器件 |
Study of Duo-Transistor Negative Resistance Device |
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| Wei Xiwen,Wang Meitian,Li Jianjun,Li Xuemei. Study of Duo-Transistor Negative Resistance Device[J]. Acta Electronica Sinica, 1995, 23(2): 74-77 |
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| Authors: | Wei Xiwen Wang Meitian Li Jianjun Li Xuemei |
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| Abstract: | The experimental results of analogue circuit show that type-S negative resistance can be obtained by using two like polarity transistors with various circuit connections.Based on this,a Two-terminal Bidirectional Negative Resistance Device(TBNRD) is fabricated and the theory of the negative resistance is studied. |
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| Keywords: | Negative resistance device Two-terminal device |
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