|
|||||
|
|
Frequency shift in a system of two laser diodes |
|
| Authors: | A A Biryukov B N Zvonkov S M Nekorkin V Ya Aleshkin V I Gavrilenko K V Marem’yanin S V Morozov V V Kocharovskii Vl V Kocharovskii |
| Affiliation: | (1) Research Physicotechnical Institute, Nizhni Novgorod State University, pr. Gagarina 23/5, Nizhni Novgorod, 603950, Russia;(2) Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhni Novgorod, 603950, Russia;(3) Institute of Applied Physics, Russian Academy of Sciences, ul. Ul’yanova 46, Nizhni Novgorod, 603950, Russia;(4) Department of Physics and Institute of Quantum Studies, Texas A & M University, TX 77843, USA |
| Abstract: | An easily reproducible construction of two butt-joint laser diodes based on a GaAs/InGaAs/InGaP structure is fabricated and investigated. The construction forms a composite cavity in which about half of stimulated emissions of a long-wavelength diode transforms into emissions of a ground mode of a waveguide of a short-wavelength diode. It is found that the emission spectrum from the composite cavity is represented not only by fundamental (close) frequencies of two diodes with a power of ～1 W, but also by their sum frequency and second harmonic with a power as high as 1 µW. The found nonlinear enrichment of the emission spectrum of a two-frequency heterolaser with a composite cavity is caused by a lattice nonlinearity of the semiconductor and allows one to plan equally effective intracavity generation of various frequencies in a far-IR range at room temperature. |
| Keywords: | |
| 本文献已被 SpringerLink 等数据库收录！ | |