Fabrication and Microstructure Characterization of Ti3SiC2 Synthesized from Ti/Si/2TiC Powders Using the Pulse Discharge Sintering (PDS) Technique |
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Authors: | Zhe-Feng Zhang Zheng Ming Sun Hitoshi Hashimoto Toshihiko Abe |
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Affiliation: | AIST Tohoku, National Institute of Advanced Industrial Science and Technology, Sendai 983-8551, Japan |
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Abstract: | Ti/Si/2TiC powders were prepared using a mixture method (M) and a mechanical alloying (MA) method to fabricate Ti3SiC2 at 1200°–1400°C using a pulse discharge sintering (PDS) technique. The results showed that the Ti3SiC2 samples with <5 wt% TiC could be rapidly synthesized from the M powders; however, the TiC content was always >18 wt% in the MA samples. Further sintering of the M powder showed that the purity of Ti3SiC2 could be improved to >97 wt% at 1250°–1300°C, which is ∼200°–300°C lower than that of sintered Ti/Si/C and Ti/SiC/C powders using the hot isostatic pressing (HIPing) technique. The microstructure of Ti3SiC2 also could be controlled using three types of powders, i.e., fine, coarse, or duplex-grained, within the sintering temperature range. In comparison with Ti/Si/C and Ti/SiC/C mixture powders, it has been suggested that high-purity Ti3SiC2 could be rapidly synthesized by sintering the Ti/Si/TiC powder mixture at relatively lower temperature using the PDS technique. |
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Keywords: | sinter/sintering carbides silicon titanium |
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