温度对直流热阴极化学气相沉积硼掺杂金刚石薄膜的影响(英文)

为了获得高品质的硼掺杂金刚石薄膜,采用直流热阴极化学气相沉积法在不同的温度下制备了硼掺杂金刚石薄膜。利用等离子体发射光谱、扫描电子显微镜、X射线衍射和Raman光谱研究了温度对硼掺杂金刚石薄膜生长特性的影响。研究发现:等离子体活性基团 C2的浓度随温度升高而增加。除了1080℃时生长的薄膜存在孔洞外,在较宽的温度范围(800～1000℃)都能够生长高质量的硼掺杂金刚石薄膜,并随温度升高薄膜质量和晶体结晶度都有所提高。与未掺杂生长的金刚石薄膜相比,掺硼薄膜即使在较低的温度(800℃)时也没有出现非金刚石相。这主要是因为掺杂剂B(OCH3)3 在气相反应中能够生成含氧活性基团,对非金刚石相具有很强的刻蚀作用。

TEMPERATURE INFLUENCE ON GROWTH CHARACTERISTIC OF BORON-DOPED DIAMOND FILMS PREPARED BY DIRECT CURRENT PLASMA CHEMICAL VAPOR DEPOSITION

In order to obtain boron-doped diamond (BDD) films with high quality, a series of BDD films were deposited by direct current plasma chemical vapor deposition at various temperatures. Optical emission spectroscopy, scanning electron microscopy, X-ray diffraction and Raman spectrum were used to analyze the plasma characteristics during growth process, surface morphology and crystalline quality of BDD films. It is found that the production of C2 radicals is much enhanced by the increase of temperature.Except a few small holes in the films prepared at 1080 ℃, the high quality BDD films can be obtained in a large temperature range of 800-1 000 ℃, and the quality of film and the diamond crystallinity are improved with the increase of temperature. Non-diamond phases were not formed even in the film prepared at 800 ℃, compared with undoped diamond film. These results are attributed to the strong etching effect on the non-diamond phases by oxygen-containing radicals produced through decomposition of B(OCH3)3 in the gas phase.