Multiple-quantum-well GaInAs/GaInAsP tapered broad-area amplifierswith monolithically integrated waveguide lens for high-powerapplications |
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Authors: | Koyama F. Liou K.-Y. Dentai A.G. Tanbun-ek T. Burrus C.A. |
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Affiliation: | AT&T Bell Lab., Holmdel, NJ; |
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Abstract: | A 1.48-μm tapered broad-area semiconductor laser amplifier with a monolithically integrated waveguide lens as demonstrated. The gain saturation characteristics of the tapered amplifier were examined. A maximum output power of 300 mW and a 3-dB saturation power of 200 mW under quasi-CW conditions were obtained from the amplifier without the waveguide lens. Output power of 200 mW was obtained with a broad emission spectrum of ~30 nm when the device was used as a superluminescent diode. The amplified output was focused to a single lobe by the monolithically integrated aspheric waveguide lens, which may be useful for efficient coupling of the output into a single-mode fiber |
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