The influence of concentrated solar radiation on the properties of Ga0.7In0.3P/GaP photoconverters |
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| Authors: | M. A. Abdukadyrov I. O. Dzhumaniyazov R. A. Muminov |
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| Affiliation: | 1.Tashkent University of Information Technologies,Tashkent,Uzbekistan;2.Physical-Technical Institute, NPO Physics of the Sun,Uzbek Academy of Sciences,Tashkent,Uzbekistan |
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| Abstract: | The properties of Ga0.7In0.3P/GaP heterophotoconverters with a two-sided contact grid are studied in the range of solar radiation concentration K s = 1−100 times and with natural convective heat exchange. It is found that, in the considered photoconverters, the dependences of an idle running voltage, the duty cycle of the current-voltage characteristic, and the efficiency on concentration are additionally improved due to high heat conduction of GaP and the temperature stability of the broad-band heterophotoconverter with “transparent“ structural design. |
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