High growth rate metal‐organic molecular beam epitaxy for the fabrication of GaAs space solar cells

In this work, the epitaxial growth of GaAs photovoltaic devices using metalorganic molecular beam epitaxy (MOMBE) and chemical beam epitaxy (CBE) with growth rates in excess of 3 μm/h is undertaken. The performance of these preliminary devices offer encouraging evidence for MOMBE and CBE as possible alternatives to the more common metalorganic chemical vapor deposition (MOCVD) for the production of III‐V solar cells. Copyright © 2000 John Wiley & Sons, Ltd.