| NiCr薄膜电阻TCR的影响因素 |
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| 引用本文： | 李丙旺.NiCr薄膜电阻TCR的影响因素[J].真空,2007,44(1):18-20. |
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| 作者姓名： | 李丙旺 |
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| 作者单位： | 华东光电集成器件研究所,安徽,蚌埠,233042 |
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| 摘 要： | 影响NiCr薄膜电阻TCR的因素很多，我们分别从溅射淀积工艺和热处理工艺来研究和探讨NiCr薄膜电阻TCR与溅射时的真空度、溅射速率、基片温度、薄膜厚度及热处理温度和时间等因素的关系，从而为提高NiCr薄膜电阻的稳定性和降低其TCR值提供有益的条件。
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| 关 键 词： | 真空度 溅射速率 基片温度 |
| 文章编号： | 1002-0322（2007）01-0018-03 |
| 修稿时间： | 2006-05-21 |
Influencing factors on thin-film NiCr resistor's TCR |
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| LI Bing-wang.Influencing factors on thin-film NiCr resistor''''s TCR[J].Vacuum,2007,44(1):18-20. |
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| Authors: | LI Bing-wang |
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| Affiliation: | East China Photoelectric IC Research Institute, Bengbu 110044,China |
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| Abstract: | There are many factors influencing the thin-film NiCr resistor's TCR(temperature coefficient of resistance),such as the vacuum degree during sputtering,sputtering rate,substrate temperature,film thickness and temperature and its holding time in heat-treatment.Discusses the relationships between TCR and these factors in view of the sputtering/depositing process and heat-treatment technology,thus providing necessary conditions for improving the stability of such resistors and lowering their TCR values. |
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| Keywords: | TCR |
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