1300-V 6H-SiC lateral MOSFETs with two RESURF zones |
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| Authors: | Banerjee S Chow TP Gutmann RJ |
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| Affiliation: | Center for Power Electron. Syst., Rensselaer Polytech. Inst., Troy, NY, USA; |
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| Abstract: | A two-zone, lateral RESURF field 6H-SiC MOSFET with breakdown voltage as high as 1300 V and specific on-resistance of 160 m/spl Omega//spl middot/cm/sup 2/ has been fabricated. These MOSFETs exhibit stable and reversible breakdown indicating avalanche breakdown in SiC that has not been reported in earlier lateral SiC MOSFETs. |
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