Extraction of interface states at emitter–base heterojunctions in AlGaAs/GaAs heterostructure bipolar transistors using sub-bandgap photonic excitation |
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Authors: | Se Woon Kim Kang Seob Roh Seung Hwan Seo Kwan Young Kim Gu Cheol Kang Sunyeong Lee Chang Min Choi So Ra Park Jun Hyun Park Ki Chan Chun Kwan Jae Song Dae Hwan Kim Dong Myong Kim |
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Affiliation: | aSchool of Electrical Engineering, Kookmin University, 861-1 Jeongneung, Seongbuk, Seoul 136-702, Republic of Korea |
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Abstract: | Distribution of interface states at the emitter–base heterojunctions in heterostructure bipolar transistors (HBTs) is characterized by using current–voltage characteristics using sub-bandgap photonic excitation. Sub-bandgap photonic source with a photon energy Eph which is less than the energy bandgap Eg (Eg,GaAs = 1.42, Eg,AlGaAs = 1.76 eV) of emitter, base, and collector of HBTs, is employed for exclusive excitation of carriers only from the interface states in the photo-responsive energy range at emitter–base heterointerface. The proposed method is applied to an Al0.3Ga0.7As/GaAs HBT (AE = WE × LE = 250 × 100 μm2) with Eph = 0.943 eV and Popt = 3 mW. Extracted interface trap density Dit was observed to be Dit,max 4.2 × 1012 eV−1 cm−2 at emitter–base heterointerface. |
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