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背电场硅太阳能电池离子辐照效应
引用本文:陈晔 李世清. 背电场硅太阳能电池离子辐照效应[J]. 半导体光电, 1997, 18(1): 51-55,65
作者姓名:陈晔 李世清
作者单位:武汉大学!武汉430072
摘    要:空间太阳能电池受电子、质子,以及重离子辐照后,要受到损伤。文章对背电场太阳能电池低能质子、高能质子、碳、氧离子辐照效应进行了研究,对辐照前后太阳能电池光电参数进行测量,并用Matte-Carlo方法对辐照粒子的硅中的能量损失过程进行了模拟计算。结果表明,各种离子辐照技术电池的损伤是不同的,低能质子对开路电压的损伤比对睡电压的损伤大得多,而高能质子 地开路电压的损伤较低能质子的反而要小,对短路电流的

关 键 词:光电器件 太阳能电池 硅 辐照效应 特性测试

Ion irradiation effects of BSF silicon solar cell
CHEN Ye LI Shiqin YAN Hepin WANG Renhui. Ion irradiation effects of BSF silicon solar cell[J]. Semiconductor Optoelectronics, 1997, 18(1): 51-55,65
Authors:CHEN Ye LI Shiqin YAN Hepin WANG Renhui
Abstract:Irradiated by electrons,protons and heavy ions,space solar cells are damaged.An irradiation effects of low energy proton,high energy proton,carbon and oxygen ions are studied for BSF silicon solar cell.The measurement of photoelectric parameters of BSF silicon solar cells is carried out before and after irradiated,and Monte-Carlo's methods are used to calculate simulantly the energy losses of an irradiation particles in material.The results show that the solar cell damages irradiated by all kinds of the particles are different.The damage of open-circuit voltage by low energy proton is more than that of short-circuit voltage,in contrast,the damage of open-circuit voltage by high energy proton is less than that by low energy proton,and its effect on short-circuit current is obviously greater than that by low energy proton.At the same times,the comparison between the damage caused by carbon,oxygen ions and particles are made.
Keywords:Photoelectronic Devices  Silicon   Solar Cell  Irradiation Effect  Characteristic Measurement  Nonionizing Energy Loss
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