纤锌矿型GaN电子迁移率的计算

考虑了对纤锌矿型氮化镓低场电子输运影响最为显著的4种散射机制——电离杂质散射，极化光学波散射，声学波压电散射和声学声子形变势散射的单个平均动量驰豫时间，采用Mattiessen's rule计算了不同补偿率以及不同载流子浓度条件下，氮化镓电子漂移迁移率，霍耳因子以及霍耳迁移率随温度的变化．计算表明，温度小于200K时总霍耳因子随温度的增加而增加，200K时达到峰值1.22，温度大于200K后霍耳因子则随着温度的增大而减小．此外，在包括室温在内的较高温度下，极化光学波散射对电子迁移率的变化起决定作用．温度较低时，声学波压电散射对电子迁移率的影响较大．

The calculation of electron mobility in GaN

Drift electron mobility, the Hall factor and Hall mobility in GaN are calculated according to Mattiessen's rule as a function of temperature for carrier concentrations with the compensation ration as a parameter on the basis of taking into account the individual average scattering momentum relaxation time of four scattering mechanisms, namely, ionized impurity scattering, polar mode optical scattering, acoustic piezoelectric scattering and acoustic phonon deformation potential scattering which have an effect on electron mobility of GaN. The results show that the total hall factor increases with the temperature below 200K and decreases above 200K. The maximum hall factor obtained is 1. 22 at 200K. In addition, the polar mode optical scattering plays a dominant role in electron mobility for room temperature and above. The acoustic phonon deformation potential scattering is also important at lower temperatures.