VHF-PECVD低温高速生长的硅薄膜材料特性研究

采用甚高频等离子体增强化学气相沉积(VHF-PECVD)方法,在保持其它参量不变的条件下,通过改变SiH,浓度(SC)成功地制备了一系列Si基薄膜样品。对材料特性的测试结果表明,同射频PECVD相比VHF-PECVD技术提高了薄膜的沉积速率．并且SC大相应的沉积速率也大;微区Raman谱测试计算结果表明,样品的晶化率(Xo)随SC、的逐渐增大而减小;X射线衍射(XRE))测试结果计算显示．样品的晶粒尺寸在20～30nm之间原子力显微镜(AFM)和微区Raman谱测试分析结果一致表明,过渡区在SC、在6％～8％之间;激活能测试结果表明,制备出接近本征的微晶Si材料。

Study on the Properties of Silicon-based Films with High Growth Rate Fabricated by VHF-PECVD at Low Temperature

A series of silicom-based film samples were fabricated at different silane concentration (SC) and the constant by very high frequency plasma enhanced chemical vapor deposition(VHF-PECVD).The results of materials measurement showed that deposition rate of films prepared by VHF-PECVD was increased largely compared with RF-PECVD.The larger silane concentration means the higher deposition rate.The crystalline volume fraction (X_c) calculated from Raman measurement decreased with the increase of SC.The grain size of sample through the analysis of XRD varied between 20 nm and 30 nm.The transition zone may be occurred at SC=6% and 8% through the analysis of AFM and Raman.The outcome of activation energy indicated that nearly intrinsic microcrystalline material might be fabricated.