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ZnS/PS复合体系的光致发光特性研究
引用本文:王彩凤,李清山.ZnS/PS复合体系的光致发光特性研究[J].激光技术,2008,32(2):128-128.
作者姓名:王彩凤  李清山
作者单位:[1]滨州学院物理与电子科学系,滨州256603 [2]曲阜师范大学物理工程学院,曲阜273165 [3]鲁东大学物理系,烟台264025
摘    要:通过电化学阳极氧化法制备了多孔硅(porous Si,PS)样品,然后用脉冲激光沉积的方法在其上沉积ZnS薄膜,并测量了ZnS/PS复合体系的光致发光谱,结果表明,在不同的激发波长(340nm,360nm,390nm)下,ZnS/PS复合体系的光致发光谱不同,ZnS和PS发光的相对(蓝/红)积分强度比值也不同;ZnS薄膜的生长温度不同(100℃,250℃,350℃)时,ZnS/PS复合体系的发光不同,随着生长温度的升高,复合体系的发光谱中,ZnS的发光增强而PS的发光减弱;衬底PS的制备电流密度不同(3mA/cm2,9mA/cm2,11mA/cm2)时,ZnS/PS复合体系的发光也有着不同的特点,在适当的PS制备电流密度条件下,把ZnS的发光与PS的发光叠加,得到了可见光区较宽的光致发光谱带(450nm~700nm),呈现较强的白光发射。

关 键 词:光学器件  白光  光致发光  脉冲激光沉积  ZnS  多孔硅
文章编号:1001-3806(2008)02-0128-03
收稿时间:2007-01-17
修稿时间:2007年1月17日

Study on photoluminescence characteristic of ZnS/PS composites
WANG Cai-feng,LI Qing-shan.Study on photoluminescence characteristic of ZnS/PS composites[J].Laser Technology,2008,32(2):128-128.
Authors:WANG Cai-feng  LI Qing-shan
Affiliation:WANG Cai-feng1,LI Qing-shan2,3(1.Department of Physics , Electronic Science,Binzhou Univercity,Binzhou 256603,China,2.College of Physics , Engineering,Qufu Normal University,Qufu 273165,3.Department of Physics,Ludong University,Yantai 264025,China)
Abstract:In order to study the photoluminescence property of zinc sulfide/porous Si composites,porous Si samples were prepared by electrochemical anodization,and zinc sulfide films were deposited on porous Si substrates by pulsed laser deposition.The photoluminescence spectra were measured.The results showed that,under different excitation wavelengths(340nm,360nm,390nm),the photoluminescence spectra of zinc sulfide/porous Si composites were different,and the relative(blue/red) integrated intensities were also differ...
Keywords:optical devices  white light  photoluminescence  pulsed laser deposition  zinc sulfide  porous Si  
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