0.1-42 GHz InP DHBT distributed amplifiers with 35 dB gain and 15 dBm output |
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| Authors: | Krishnamurthy K. Chow J. Rodwell M.J.W. Pullela R. |
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| Affiliation: | GTRAN Inc., Newbury Park, CA, USA; |
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| Abstract: | An InP double hetero-junction bipolar transistor (DHBT) distributed power amplifier MMIC with 35 dB gain, 42 GHz bandwidth and 15 dBm output power is reported. This represents the highest power and largest gain reported over this bandwidth from a single chip HBT amplifier. A lumped preamplifier with a novel distributed output is used to obtain high gain and wide bandwidth at these power levels. |
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