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Molecular dynamics study of deposition mechanism of cubic boron nitride
Authors:H Koga  Y Nakamura  Masahiko Watanabe  T Yoshida
Affiliation:1. Department of Metallurgy and Materials Science, Graduate School of Engineering, The University of Tokyo, 7-3-1 HOngo, Bunkyo-ku, Tokyo, 113-8656, Japankoga@cello.mm.t.u-tokyo.ac.jp;3. Department of Metallurgy and Materials Science, Graduate School of Engineering, The University of Tokyo, 7-3-1 HOngo, Bunkyo-ku, Tokyo, 113-8656, Japan;4. Core Research for Evolutional Science and Technology (CREST), Japan Science and Technology Corporation, Japan;5. Core Research for Evolutional Science and Technology (CREST), Japan Science and Technology Corporation, Japan
Abstract:We have performed molecular dynamics simulations of bombardment of graphitic boron nitride (gBN) by energetic boron and nitrogen particles in order to examine the roles of ion bombardment in ion/plasma-assisted deposition of cubic boron nitride (cBN) thin films. We have found that the interaction of the energetic particles with gBN creates four-fold coordinated local structures (sp3-formation) inside gBN. We have also found that clusters of sp3-formations are created as a result of successive bombardment, some of which have cBN-like structures. On the basis of these results, we propose an atomic-scale model of cBN nucleation in which successive sp3-formation converts gBN into cBN.
Keywords:Molecular dynamics  Growth models  Nucleation  Thin films  lon bombardment  Defects  Cubic boron nitride  Rhombohedral boron nitride  Hexagonal boron nitride
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